Title: STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si$_{1-x}$ B$_x$

Abstract: We report on the structural properties of highly B-doped silicon (> 2 at. %) by nanosecond laser doping. STEM analysis followed by HAADF contrast studies and GPA were employed. We investigate the crystalline quality, the deformation and the B distribution profile of the doped layer and compare the results to SIMS analyses and electrical Hall measurements. When increasing the active B concentration above 4.3 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. If we increase the B incorporation, we increasingly observe small precipitates, active B higher concentration filaments and stacking faults. At the highest concentration studied, large precipitates form which are probably related to the decrease of active B concentration and the gradual loss of superconductivity.