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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices
(Submitted on 13 Sep 2022 (v1), last revised 19 May 2023 (this version, v2))
Abstract: Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear (linearity error < 4.19%) and symmetrical long-term potentiation/depression process, resulting in better performance compared to other memristor synapses. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61%. Furthermore, the trainable activation function of SOT-N enables the integrated SOT-ANN to execute the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline.
Submission history
From: Puyang Huang [view email][v1] Tue, 13 Sep 2022 13:48:09 GMT (1560kb)
[v2] Fri, 19 May 2023 01:28:39 GMT (1975kb)
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