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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Hole spin manipulation in inhomogeneous and non-separable electric fields
(Submitted on 21 Sep 2022 (this version), latest version 28 Dec 2022 (v3))
Abstract: The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane AC electric fields. We consider Ge quantum dots electrically confined in a Ge/GeSi quantum well as an illustration. We show that the lack of separability between the vertical and in-plane motions of the hole gives rise to an additional spin-orbit coupling mechanism (beyond the usual linear and cubic in momentum Rashba terms) that modulates the principal axes of the hole gyromagnetic g-matrix. This non-separability mechanism can be of the same order of magnitude as Rashba-type interactions, and enables spin manipulation when the magnetic field is applied in the plane of the heterostructure even when the dot is symmetric (disk-shaped). More generally, we show that Rabi oscillations in strongly patterned electric fields harness a variety of g-factor modulations. We discuss the implications for the design, modeling and understanding of hole spin qubit devices.
Submission history
From: Yann Michel Niquet [view email][v1] Wed, 21 Sep 2022 09:53:56 GMT (1082kb,D)
[v2] Fri, 2 Dec 2022 15:18:22 GMT (3370kb,D)
[v3] Wed, 28 Dec 2022 12:14:56 GMT (1080kb,D)
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