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Condensed Matter > Materials Science
Title: Surfactant behavior and limited incorporation of Indium during in-situ doping of GeSn grown by MBE
(Submitted on 26 Sep 2022 (v1), last revised 17 Mar 2023 (this version, v4))
Abstract: GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in-situ during epitaxy. From the electronic valence point of view, p-type dopants of group-IV materials include B, Al, Ga and In. The latter element has never been investigated as p-type dopant in GeSn. In this work, we explore in-situ In p-type doping of GeSn grown by MBE. We demonstrate that In acts as a surfactant during epitaxial growth of GeSn:In, accumulating on surface and inducing segregation in the form of mobile Sn-In liquid droplets, strongly affecting the local composition of the material. In non-defective GeSn, we measure a maximal In incorporation of 2.8E18cm-3, which is two orders of magnitude lower than the values reported in the literature for in-situ p-type doping of GeSn. We further show that In induces the nucleation of defects at low growth temperatures, hindering out-of-equilibrium growth processes for maximization of dopant incorporation. This work provides insights on the limitations associated with in-situ In doping of GeSn, and discourages its utilization in GeSn-based optoelectronic devices.
Submission history
From: Andrea Giunto [view email][v1] Mon, 26 Sep 2022 11:28:05 GMT (3028kb,D)
[v2] Thu, 29 Sep 2022 11:42:51 GMT (22370kb,D)
[v3] Fri, 24 Feb 2023 17:33:29 GMT (48091kb,D)
[v4] Fri, 17 Mar 2023 12:35:08 GMT (94601kb,D)
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