Title: Sn-In co-segregation and In surfactant effect in MBE in-situ doping of GeSn

Abstract: GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in-situ during epitaxy. From the electronic valence point of view, p-type dopants of group-IV materials include B, Al, Ga and In. The latter element has never been investigated as p-type dopant in GeSn. In this work, we explore in-situ In p-type doping of GeSn grown by MBE. We show that In acts as a surfactant during epitaxial growth of GeSn:In, accumulating on surface and inducing segregation in the form of mobile Sn-In liquid droplets, strongly affecting the local composition of the material. This work provides insights in the thermodynamic origins of this behavior, and discourages the utilization of In in GeSn-based optoelectronic devices.