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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures
(Submitted on 28 Sep 2022 (v1), last revised 29 Dec 2023 (this version, v3))
Abstract: We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schr\"odinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system.
Submission history
From: Jarek Pawłowski [view email][v1] Wed, 28 Sep 2022 22:00:39 GMT (3922kb,D)
[v2] Fri, 13 Oct 2023 23:29:26 GMT (3959kb,D)
[v3] Fri, 29 Dec 2023 21:00:11 GMT (3960kb,D)
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