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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Flopping-mode spin qubit in a Si-MOS quantum dot
(Submitted on 29 Sep 2022 (v1), last revised 23 Mar 2023 (this version, v2))
Abstract: Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.
Submission history
From: Guo-Ping Guo [view email][v1] Thu, 29 Sep 2022 03:35:15 GMT (14031kb,D)
[v2] Thu, 23 Mar 2023 03:51:19 GMT (2470kb,D)
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