Title: Single-shot readout of a flopping-mode spin qubit in a Si-MOS quantum dot

Abstract: Spin qubits based on silicon-metal-oxide-semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for a large-scale quantum computer. By delocalizing an electron across a double quantum dots (DQD) charge state, "flopping-mode" electric dipole spin resonance (EDSR) is present in Si/SiGe QDs via dispersive readout. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via single-shot readout. When changing detuning, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Moreover, we confirm the generality of flopping-mode EDSR by reproducing the EDSR spectra measurement in a nearby DQD. Our results offer a new route to large-scale spin qubit systems with higher control fidelities in Si-MOS quantum dots.