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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS$_4$

Abstract: Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated layers of CrPS$_4$ -- a 2D layered antiferromagnetic semiconductor whose bandwidth approaches 1 eV -- allow the realization of FETs that operate properly down to cryogenic temperature. Using these devices, we perform conductance measurements as a function of temperature and magnetic field, to determine the full magnetic phase diagram, which includes a spin-flop and a spin-flip phase. We find that the magnetoconductance depends strongly on gate voltage, reaching values as high as 5000 % near the threshold for electron conduction. The gate voltage also allows the magnetic states to be tuned, despite the relatively large thickness of the CrPS$_4$ multilayers employed in our study. Our results show the need to employ 2D magnetic semiconductors with sufficiently large bandwidth to realize properly functioning transistors, and identify a candidate material to realize a fully gate-tunable half-metallic conductor.
Comments: Accepted for publication in Advanced Materials
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Journal reference: Advanced Materials 2023
DOI: 10.1002/adma.202211653
Cite as: arXiv:2301.10535 [cond-mat.mes-hall]
  (or arXiv:2301.10535v2 [cond-mat.mes-hall] for this version)

Submission history

From: Nicolas Ubrig [view email]
[v1] Wed, 25 Jan 2023 12:00:41 GMT (2383kb,D)
[v2] Tue, 2 May 2023 20:53:41 GMT (18311kb,AD)

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