We gratefully acknowledge support from
the Simons Foundation and member institutions.
Full-text links:


Current browse context:


Change to browse by:

References & Citations


(what is this?)
CiteULike logo BibSonomy logo Mendeley logo del.icio.us logo Digg logo Reddit logo ScienceWISE logo

Condensed Matter > Materials Science

Title: Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2

Authors: Riccardo Torsi (1), Kyle T. Munson (2), Rahul Pendurthi (3), Esteban A. Marques (4,5), Benoit Van Troeye (4), Lysander Huberich (6), Bruno Schuler (6), Maxwell A. Feidler (1), Ke Wang (7), Geoffrey Pourtois (4), Saptarshi Das (3), John B. Asbury (2), Yu-Chuan Lin (1), Joshua A. Robinson (1,2,7,8) ((1) Department of Materials Science and Engineering, The Pennsylvania State University, (2) Department of Chemistry, The Pennsylvania State University, (3) Department of Engineering Science and Mechanics, The Pennsylvania State University, (4) Imec, Leuven, (5) Department of Molecular Design and Synthesis, KU Leuven, (6) nanotechATsurfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, (7) Materials Research Institute, The Pennsylvania State University, (8) Department of Physics, The Pennsylvania State University)
Abstract: Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10x. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the MoS2 growth-front when Re is introduced, resulting in an improved stoichiometry. Remarkably, defect photoluminescence (PL) commonly seen in as-grown MOCVD MoS2 is suppressed by 6x at 0.05 atomic percent (at.%) Re and completely quenched with 1 at.% Re. Furthermore, Re-MoS2 transistors exhibit up to 8x higher drain current and enhanced mobility compared to undoped MoS2 because of the improved material quality. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
Comments: 20 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2302.00110 [cond-mat.mtrl-sci]
  (or arXiv:2302.00110v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Riccardo Torsi [view email]
[v1] Tue, 31 Jan 2023 21:24:50 GMT (2459kb)

Link back to: arXiv, form interface, contact.