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Condensed Matter > Mesoscale and Nanoscale Physics
Title: Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate
(Submitted on 15 Mar 2023 (v1), last revised 25 Apr 2023 (this version, v2))
Abstract: We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large.
Submission history
From: V. Ryzhii [view email][v1] Wed, 15 Mar 2023 09:45:12 GMT (1163kb)
[v2] Tue, 25 Apr 2023 02:00:33 GMT (1163kb)
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