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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Nonlinear spin-polarized transport through a ferromagnetic domain wall

Abstract: A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.
Comments: 5 pages, 3 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI: 10.1103/PhysRevLett.89.098302
Cite as: arXiv:cond-mat/0202002 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0202002v1 [cond-mat.mes-hall] for this version)

Submission history

From: Giovanni Vignale [view email]
[v1] Fri, 1 Feb 2002 04:49:31 GMT (488kb)

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