References & Citations
Condensed Matter
Title: Gd disilicide nanowires attached to Si(111) steps
(Submitted on 2 May 2002 (v1), last revised 29 Jul 2002 (this version, v3))
Abstract: Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-1 1 0 ] direction, which is consistent with a lattice match of 0.8% with the a-axis of the hexagonal silicide, together with a large mismatch in all other directions. This mechanism is similar to that observed previously on Si(100). In contrast to Si(100), the wires are always attached to step edges on Si(111) and can thus be grown selectively on regular step arrays.
Submission history
From: Jessica L. McChesney [view email][v1] Thu, 2 May 2002 17:00:19 GMT (360kb)
[v2] Mon, 6 May 2002 19:18:51 GMT (364kb)
[v3] Mon, 29 Jul 2002 21:21:47 GMT (364kb)
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