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Condensed Matter

Title: Gd disilicide nanowires attached to Si(111) steps

Abstract: Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-1 1 0 ] direction, which is consistent with a lattice match of 0.8% with the a-axis of the hexagonal silicide, together with a large mismatch in all other directions. This mechanism is similar to that observed previously on Si(100). In contrast to Si(100), the wires are always attached to step edges on Si(111) and can thus be grown selectively on regular step arrays.
Comments: 3 pages including 4 figures
Subjects: Condensed Matter (cond-mat)
Journal reference: Nanotechnology 13 (2002)545-7
DOI: 10.1088/0957-4484/13/4/319
Cite as: arXiv:cond-mat/0205025
  (or arXiv:cond-mat/0205025v3 for this version)

Submission history

From: Jessica L. McChesney [view email]
[v1] Thu, 2 May 2002 17:00:19 GMT (360kb)
[v2] Mon, 6 May 2002 19:18:51 GMT (364kb)
[v3] Mon, 29 Jul 2002 21:21:47 GMT (364kb)

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