Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Jaroszynski, J.; Popovic, Dragana; Klapwijk, T. M.

doi:10.1103/PhysRevLett.89.276401

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Condensed Matter > Strongly Correlated Electrons

Title: Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Authors: J. Jaroszynski, Dragana Popovic, T. M. Klapwijk

(Submitted on 10 May 2002 (v1), last revised 18 Dec 2002 (this version, v2))

Abstract: Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.

Comments:	revtex4; 4+ pages, 5 figures
Subjects:	Strongly Correlated Electrons (cond-mat.str-el); Disordered Systems and Neural Networks (cond-mat.dis-nn); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference:	Phys. Rev. Lett. 89, 276401 (2002)
DOI:	10.1103/PhysRevLett.89.276401
Cite as:	arXiv:cond-mat/0205226 [cond-mat.str-el]
	(or arXiv:cond-mat/0205226v2 [cond-mat.str-el] for this version)

Submission history

From: Dragana Popovic [view email]
[v1] Fri, 10 May 2002 19:35:07 GMT (296kb)
[v2] Wed, 18 Dec 2002 17:17:37 GMT (269kb)

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