Title: The difference between Si and Ge(001) surfaces in the initial stages of growth

Abstract: The initial stages of growth of Ge and Si on the Ge(001) surface are studied and compared to growth on the Si(001) surface. Metastable rows of diluted ad-dimers exist on both surfaces as intermediate stages of epitaxial growth. Unexpectedly, for Ge(001) these rows are found exclusively in the <310> directions, whereas on Si(001) the preferred direction is <110>. This qualitative difference between Si and Ge surfaces reflects the subtle difference in the chemistry of these two elements, which has direct consequences for epitaxial growth on these surfaces.