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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Analysis of integrated single-electron memory operation

Abstract: Various aspects of single-electron memory are discussed. In particular, we analyze the single-electron charging by Fowler-Nordheim tunneling, propose the idea of background charge compensation, and discuss the defect-tolerant architecture based on nanofuses.
Comments: 6 pages
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: J. Appl. Phys. 92, 7291 (2002)
DOI: 10.1063/1.1521788
Cite as: arXiv:cond-mat/0206016 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0206016v1 [cond-mat.mes-hall] for this version)

Submission history

From: Alexander Korotkov [view email]
[v1] Sun, 2 Jun 2002 01:58:08 GMT (75kb)

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