References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Current-voltage Characteristics of Molecular Conductors: Two versus Three Terminal
(Submitted on 18 Jun 2002 (v1), last revised 30 Oct 2002 (this version, v3))
Abstract: This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a standard silicon MOSFET. A self-consistent solution of coupled quantum transport and Poisson's equations shows that even for extremely small channel lengths (about 1 nm), a ``well-tempered'' molecular FET demands much the same electrostatic considerations as a ``well-tempered'' conventional MOSFET. In other words, we show that just as in a conventional MOSFET, the gate oxide thickness needs to be much smaller than the channel length (length of the molecule) for the gate control to be effective. Furthermore, we show that a rigid molecule with metallic source and drain contacts has a temperature independent subthreshold slope much larger than 60 mV/decade, because the metal-induced gap states in the channel prevent it from turning off abruptly. However, this disadvantage can be overcome by using semiconductor contacts because of their band-limited nature.
Submission history
From: Prashant Damle [view email][v1] Tue, 18 Jun 2002 19:31:39 GMT (273kb)
[v2] Wed, 10 Jul 2002 01:53:57 GMT (263kb)
[v3] Wed, 30 Oct 2002 21:23:34 GMT (261kb)
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