References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit
(Submitted on 26 Jun 2002 (v1), last revised 17 Dec 2002 (this version, v2))
Abstract: The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^{\sigma}$ determined from the experiment, however, decreases with increasing $r_{s}$ for $r_{s}\agt22$, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.
Submission history
From: Hwayong Noh [view email][v1] Wed, 26 Jun 2002 15:59:54 GMT (350kb)
[v2] Tue, 17 Dec 2002 00:08:17 GMT (359kb)
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