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Condensed Matter > Materials Science

Title: Practical design and simulation of silicon-based quantum dot qubits

Abstract: Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics.
Comments: published version
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. B 67, 121301(R) (2003)
DOI: 10.1103/PhysRevB.67.121301
Cite as: arXiv:cond-mat/0208021 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0208021v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Mark Friesen [view email]
[v1] Thu, 1 Aug 2002 17:14:33 GMT (303kb)
[v2] Tue, 6 May 2003 21:22:48 GMT (305kb)

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