References & Citations
Condensed Matter
Title: Low-temperature spin relaxation in n-type GaAs
(Submitted on 5 Aug 2002 (v1), last revised 9 Aug 2002 (this version, v2))
Abstract: Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}.
A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction
Submission history
From: Kirill Kavokin [view email][v1] Mon, 5 Aug 2002 13:12:39 GMT (50kb)
[v2] Fri, 9 Aug 2002 12:29:20 GMT (45kb)
Link back to: arXiv, form interface, contact.