Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

Van Dorpe, P.; Motsnyi, V. F.; Nijboer, M.; Goovaerts, E.; Safarov, V. I.; Das, J.; Van Roy, W.; Borghs, G.; De Boeck, J.

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Condensed Matter > Materials Science

Title: Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

Authors: P. Van Dorpe, V.F. Motsnyi, M. Nijboer, E. Goovaerts, V.I. Safarov, J. Das, W. Van Roy, G. Borghs, J. De Boeck

(Submitted on 16 Aug 2002 (v1), last revised 25 Jun 2003 (this version, v2))

Abstract: We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.

Subjects:	Materials Science (cond-mat.mtrl-sci)
Journal reference:	Jpn. J. Appl. Phys. Vol.42 No.5B pp.L502 - L504 (2003)
Cite as:	arXiv:cond-mat/0208325 [cond-mat.mtrl-sci]
	(or arXiv:cond-mat/0208325v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Pol Van Dorpe [view email]
[v1] Fri, 16 Aug 2002 10:19:56 GMT (122kb)
[v2] Wed, 25 Jun 2003 07:16:17 GMT (100kb)

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