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Condensed Matter > Materials Science

Title: Accurate first principles detailed balance determination of Auger recombination and impact ionization rates in semiconductors

Authors: S. Picozzi (Istituto Nazionale di Fisica della Materia (INFM), Dip. Fisica, Università degli Studi di L'Aquila, Coppito (L'Aquila), Italy), R. Asahi (Toyota Central R&D Labs., Inc., Nagakute, Japan), C.B. Geller (Bettis Atomic Power Laboratory, West Mifflin, PA, USA), A.J. Freeman (Department of Physics and Astronomy and Materials Research Center, Northwestern University, Evanston, IL, USA)
Abstract: The technologically important problem of predicting Auger recombination lifetimes in semiconductors is addressed by means of a fully first--principles formalism. The calculations employ highly precise energy bands and wave functions provided by the full--potential linearized augmented plane wave (FLAPW) code based on the screened exchange local density approximation. The minority carrier Auger lifetime is determined by two closely related approaches: \emph{i}) a direct evaluation of the Auger rates within Fermi's Golden Rule, and \emph{ii}) an indirect evaluation, based on a detailed balance formulation combining Auger recombination and its inverse process, impact ionization, in a unified framework. Calculated carrier lifetimes determined with the direct and indirect methods show excellent consistency \emph{i}) between them for $n$-doped GaAs and \emph{ii}%) with measured values for GaAs and InGaAs. This demonstrates the validity and accuracy of the computational formalism for the Auger lifetime and indicates a new sensitive tool for possible use in materials performance optimization.
Comments: Phys. Rev. Lett. accepted
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1103/PhysRevLett.89.197601
Cite as: arXiv:cond-mat/0209004 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0209004v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Mary Lesniak [view email]
[v1] Fri, 30 Aug 2002 21:00:56 GMT (11kb)

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