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Condensed Matter > Materials Science

Title: Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs

Authors: K W Edmonds, R P Campion, K-Y Wang, A C Neumann, B L Gallagher, C T Foxon, P C Main
(Submitted on 5 Sep 2002)
Abstract: The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors.
Comments: 3 pages, 4 figures, MMM conference proceedings
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1063/1.1556110
Cite as: arXiv:cond-mat/0209123 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0209123v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Kevin Edmonds [view email]
[v1] Thu, 5 Sep 2002 12:06:18 GMT (176kb)
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