References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Spin injection into a ballistic semiconductor microstructure
(Submitted on 23 Sep 2002 (v1), last revised 2 Nov 2002 (this version, v2))
Abstract: A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor $r_N^*=(h/e^2)(\pi^2/S_N)$, where $S_N$ is the Fermi-surface cross-section. It competes with the diffusion resistances of the ferromagnets $r_F$, and $\gamma\sim r_F/r_N^*\ll 1$ in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulae for the junction resistance and the spin-valve effect are presented.
Submission history
From: Emmanuel I. Rashba [view email][v1] Mon, 23 Sep 2002 22:19:43 GMT (9kb)
[v2] Sat, 2 Nov 2002 20:33:53 GMT (9kb)
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