Title: Suppression of the weak localization near the metal-insulator transition in two dimensions

Abstract: We have studied the suppression of weak localization by perpendicular magnetic field in low-disordered two-dimensional electron systems in silicon for a range of electron densities. We show that the negative corrections to the resistance, found in the metallic phase, disappear in the vicinity of the metal-insulator transition. Our data suggest that localization is fully suppressed near and at the transition even in zero field, confirming similar results in ultra-clean p-GaAs/AlGaAs heterostructures and verifying their universality.