References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide
(Submitted on 4 Oct 2002 (v1), last revised 28 Oct 2002 (this version, v2))
Abstract: Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
Submission history
From: Sergei Vyshenski [view email][v1] Fri, 4 Oct 2002 14:57:43 GMT (26kb)
[v2] Mon, 28 Oct 2002 14:44:09 GMT (26kb)
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