Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Tang, H. X.; Kawakami, R. K.; Awschalom, D. D.; Roukes, M. L.

doi:10.1103/PhysRevLett.90.107201

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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Authors: H.X. Tang, R.K. Kawakami, D.D. Awschalom, M.L. Roukes

(Submitted on 5 Oct 2002 (v1), last revised 12 Oct 2002 (this version, v2))

Abstract: Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is four orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Comments:	3 figures
Subjects:	Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI:	10.1103/PhysRevLett.90.107201
Cite as:	arXiv:cond-mat/0210118 [cond-mat.mes-hall]
	(or arXiv:cond-mat/0210118v2 [cond-mat.mes-hall] for this version)

Submission history

From: Hong Tang [view email]
[v1] Sat, 5 Oct 2002 15:40:32 GMT (412kb)
[v2] Sat, 12 Oct 2002 16:32:43 GMT (412kb)

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