References & Citations
Condensed Matter > Materials Science
Title: Origin of the efficient light emission from inversion domain boundaries in GaN
(Submitted on 9 Oct 2002 (v1), last revised 11 Oct 2002 (this version, v2))
Abstract: Intentionally-produced inversion domain boundaries in GaN have been reported to be highly efficient recombination centers. Here I report a rationale for this phenomenon based on ab initio density-functional calculations. I also propose a model, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.
Submission history
From: Vincenzo Fiorentini [view email][v1] Wed, 9 Oct 2002 13:21:55 GMT (80kb)
[v2] Fri, 11 Oct 2002 08:52:52 GMT (80kb)
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