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Condensed Matter > Mesoscale and Nanoscale Physics

Title: On Effective Electron Mass of Silicon MOSFET at Low Electron Density

Authors: V.T. Dolgopolov (Institute of Solid State Physics RAS, Russia)
Abstract: The trial wave function method developed in Ref.s \cite{gutz,brink} for the case of narrow {\it s}-band in a perfect crystal is adapted for calculation of the density dependence of the effective mass and the Lande factor in a dilute two-dimensional electron system. We find that the effective mass has a tendency to diverge at a certain critical concentration, whereas the $g$ factor remains finite.
Comments: 5 pages, 2 figures. Published in JETP Letters
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI: 10.1134/1.1525041
Cite as: arXiv:cond-mat/0211482 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0211482v1 [cond-mat.mes-hall] for this version)

Submission history

From: Eduard V. Deviatov [view email]
[v1] Thu, 21 Nov 2002 17:50:34 GMT (38kb)

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