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Condensed Matter > Materials Science

Title: Electron Spin-Relaxation Times of Phosphorus Donors in Silicon

Abstract: Pulsed electron paramagnetic resonance measurements of donor electron spins in natural phosphorus-doped silicon (Si:P) and isotopically-purified 28Si:P show a strongly temperature-dependent longitudinal relaxation time, T1, due to an Orbach process with DeltaE = 126 K. The 2-pulse echo decay is exponential in 28Si:P, with the transverse relaxation (decoherence) time, T2, controlled by the Orbach process above ~12 K and by instantaneous diffusion at lower temperatures. Spin echo experiments with varying pulse turning angles show that the intrinsic T2 of an isolated spin in 28Si:P is ~60 ms at 7 K.
Comments: Submitted to PRL on 02.28.2003
Subjects: Materials Science (cond-mat.mtrl-sci)
DOI: 10.1103/PhysRevB.68.193207
Cite as: arXiv:cond-mat/0303006 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0303006v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Alexei M. Tyryshkin [view email]
[v1] Sat, 1 Mar 2003 05:15:39 GMT (157kb)

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