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Condensed Matter > Mesoscale and Nanoscale Physics

Title: AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

Abstract: Recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 10^6 cm^2/Vs at 4.2 K) 2D hole gas just 350A below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows 9 quantum steps at 50 mK.
Comments: to appear in Superlattices and Microstructures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0303011 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0303011v1 [cond-mat.mes-hall] for this version)

Submission history

From: Leonid Rokhinson [view email]
[v1] Sun, 2 Mar 2003 04:52:11 GMT (599kb)

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