References & Citations
Condensed Matter > Materials Science
Title: On possible spin injection at non-ideal Schottky contacts
(Submitted on 21 May 2003 (v1), last revised 3 Feb 2004 (this version, v2))
Abstract: The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.
Submission history
From: Dean Korosak [view email][v1] Wed, 21 May 2003 16:04:11 GMT (273kb)
[v2] Tue, 3 Feb 2004 13:52:50 GMT (102kb)
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