We gratefully acknowledge support from
the Simons Foundation and member institutions.
Full-text links:

Download:

(license)

Current browse context:

cond-mat
< prev | next >
new | recent | 0306

References & Citations

Bookmark

(what is this?)
CiteULike logo BibSonomy logo Mendeley logo del.icio.us logo Digg logo Reddit logo

Condensed Matter > Strongly Correlated Electrons

Title: Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

Authors: K.Ueno, I.H.Inoue, H.Akoh, M.Kawasaki, Y.Tokura, H.Takagi
(Submitted on 17 Jun 2003)
Abstract: A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.
Subjects: Strongly Correlated Electrons (cond-mat.str-el); Materials Science (cond-mat.mtrl-sci)
Journal reference: Appl.Phys.Lett. 83(2003), 1755
DOI: 10.1063/1.1605806
Cite as: arXiv:cond-mat/0306436 [cond-mat.str-el]
  (or arXiv:cond-mat/0306436v1 [cond-mat.str-el] for this version)

Submission history

From: Kazunori Ueno [view email]
[v1] Tue, 17 Jun 2003 12:58:49 GMT (160kb)
Which authors of this paper are endorsers? | Disable MathJax (What is MathJax?)

Link back to: arXiv, form interface, contact.