References & Citations
Condensed Matter > Materials Science
Title: A possible route to grow a (Mn:Si(1-x)Gex)-based diluted magnetic semiconductor
(Submitted on 31 Oct 2003)
Abstract: We systematically investigate, using ab initio density-functional theory calculations, the properties of interstitial and substitutional Mn in both Si and Ge, as well as in the Si(1-x)Gex alloy. We show that volume effects are not the main reason Mn prefers to be a subsitutional impurity in pure Ge, and chemical effects, therefore, play an important role. Using realistic models of Si(1-x)Gex, we show that for x approximately greater than 0.16 substitutional Mn in Ge-rich neighborhoods become more stable than interstitial Mn, which may allow the growth of Si-based diluted magnetic semiconductors.
Submission history
From: Antonio Jose Roque da Silva [view email][v1] Fri, 31 Oct 2003 13:52:51 GMT (14kb)
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