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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices

Abstract: We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/4 cycle phase shift with respect to the $hf = j\hbar\omega_{c}$ condition for $j \geq 1$, and they also suggest a small ($\approx$ 2%) reduction in the effective mass ratio, $m^{*}/m$, with respect to the standard value for GaAs/AlGaAs devices.
Comments: 4 pages, 4 color figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Journal reference: Phys. Rev. Lett. 92, 146801 (2004)
DOI: 10.1103/PhysRevLett.92.146801
Cite as: arXiv:cond-mat/0311010 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0311010v2 [cond-mat.mes-hall] for this version)

Submission history

From: Ramesh Mani [view email]
[v1] Mon, 3 Nov 2003 17:52:43 GMT (174kb)
[v2] Thu, 29 Apr 2004 22:51:08 GMT (174kb)

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