References & Citations
Condensed Matter > Mesoscale and Nanoscale Physics
Title: Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
(Submitted on 3 Nov 2003 (v1), last revised 17 Dec 2003 (this version, v2))
Abstract: The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm2/Vs in highly-doped structures and 2800 cm2/Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-doped supply layers. Then the electron transport is investigated in a gated modulation-doped structure in which the contribution of parasitic paths is negligible. The mobility is shown to be higher than in comparable ungated structures and dependent on the gate voltage, as a result of the electron density dependence of remote impurity screening.
Submission history
From: Arnaud Bournel [view email][v1] Mon, 3 Nov 2003 11:17:12 GMT (149kb)
[v2] Wed, 17 Dec 2003 07:48:47 GMT (150kb)
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