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Condensed Matter > Materials Science

Title: Nucleation and Growth of GaN/AlN Quantum Dots

Abstract: We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, two-dimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, island height and density increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth.
Comments: Submitted to PRB, 10 pages, 15 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Journal reference: Phys. Rev. B 70, 125427 (2004)
DOI: 10.1103/PhysRevB.70.125427
Cite as: arXiv:cond-mat/0311050 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0311050v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Christoph Adelmann [view email]
[v1] Mon, 3 Nov 2003 19:45:09 GMT (220kb)

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