Circuit with small-capacitance high-quality Nb Josephson junctions

Watanabe, Michio; Nakamura, Yasunobu; Tsai, Jaw-Shen

doi:10.1063/1.1640798

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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Circuit with small-capacitance high-quality Nb Josephson junctions

Authors: Michio Watanabe, Yasunobu Nakamura, Jaw-Shen Tsai

(Submitted on 14 Nov 2003 (v1), last revised 16 Jan 2004 (this version, v2))

Abstract: We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.

Comments:	Published version, RevTeX4
Subjects:	Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Journal reference:	Appl. Phys. Lett. 84, 410 (2004)
DOI:	10.1063/1.1640798
Cite as:	arXiv:cond-mat/0311332 [cond-mat.mes-hall]
	(or arXiv:cond-mat/0311332v2 [cond-mat.mes-hall] for this version)

Submission history

From: Michio Watanabe [view email]
[v1] Fri, 14 Nov 2003 02:38:16 GMT (361kb)
[v2] Fri, 16 Jan 2004 02:18:29 GMT (361kb)

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