References & Citations
Condensed Matter > Superconductivity
Title: Ion beam sputtering method for progressive reduction of nanostructures dimensions
(Submitted on 17 Nov 2003 (v1), last revised 21 Nov 2003 (this version, v2))
Abstract: An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET). The method is based on removal of material from the structures when exposed to energetic argon ions and it was shown to be applicable multiple times to the same sample. The electrical measurements and samples imaging in between the sputtering sessions clearly indicated that the dimensions, i.e. cross-section of the nanowires and area of the tunnel junctions in SET, were progressively reduced without noticeable degradation of the sample structure. We were able to reduce the effective diameter of aluminum nanowires from ~65 nm down to ~30 nm, whereas the tunnel junction area has been reduced by 40 %.
Submission history
From: Konstantin Arutyunov [view email][v1] Mon, 17 Nov 2003 13:44:58 GMT (324kb)
[v2] Fri, 21 Nov 2003 12:17:02 GMT (324kb)
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