References & Citations
Condensed Matter > Materials Science
Title: Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN
(Submitted on 3 Feb 2004 (v1), last revised 22 Sep 2004 (this version, v2))
Abstract: We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and 20%, of the Cr atoms, respectively, are magnetically active. While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activated conduction that follows the exponential law expected for variable range hopping between localized states. Hall measurements on a Cr-GaN sample indicate a mobility of 0.06 cm^2/V.s, which falls in the range characteristic of hopping conduction, and a free carrier density (1.4E20/cm^3), which is similar in magnitude to the measured magnetically-active Cr concentration (4.9E19/cm^3). A large negative magnetoresistance is attributed to scattering from loose spins associated with non-ferromagnetic impurities. The results indicate that ferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchange mechanism as a result of hopping between near-midgap substitutional Cr impurity bands.
Submission history
From: Hongxue Liu [view email][v1] Tue, 3 Feb 2004 22:11:38 GMT (519kb)
[v2] Wed, 22 Sep 2004 16:51:02 GMT (321kb)
Link back to: arXiv, form interface, contact.