Field-Induced Resistive Switching in Metal-Oxide Interfaces

Tsui, S.; Baikalov, A.; Cmaidalka, J.; Sun, Y. Y.; Wang, Y. Q.; Xue, Y. Y.; Chu, C. W.; Chen, L.; Jacobson, A. J.

doi:10.1063/1.1768305

Full-text links:

Download:

(license)

Current browse context:

cond-mat

< prev | next >

new | recent | 0402

References & Citations

NASA ADS

Bookmark

(what is this?)

Condensed Matter > Superconductivity

Title: Field-Induced Resistive Switching in Metal-Oxide Interfaces

Authors: S. Tsui (1), A. Baikalov (1), J. Cmaidalka (1), Y. Y. Sun (1), Y. Q. Wang (1), Y. Y. Xue (1), C. W. Chu (1,2,3), L. Chen (4), A. J. Jacobson (4) ((1) Department of Physics and TCSAM, University of Houston, Texas, (2) Lawrence Berkeley National Laboratory, California, (3) Hong Kong University of Science and Technology, (4) Department of Chemistry, University of Houston, Texas)

(Submitted on 27 Feb 2004)

Abstract: We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.

Comments:	4 pages, 3 figures
Subjects:	Superconductivity (cond-mat.supr-con)
DOI:	10.1063/1.1768305
Cite as:	arXiv:cond-mat/0402687 [cond-mat.supr-con]
	(or arXiv:cond-mat/0402687v1 [cond-mat.supr-con] for this version)

Submission history

From: C. W. Chu [view email]
[v1] Fri, 27 Feb 2004 17:43:50 GMT (86kb)

Which authors of this paper are endorsers? | Disable MathJax (What is MathJax?)

Link back to: arXiv, form interface, contact.