References & Citations
Condensed Matter > Materials Science
Title: Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction
(Submitted on 19 Mar 2004 (v1), last revised 22 Nov 2004 (this version, v3))
Abstract: Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.
Submission history
From: Daichi Chiba [view email][v1] Fri, 19 Mar 2004 09:15:09 GMT (319kb)
[v2] Mon, 11 Oct 2004 21:36:55 GMT (200kb)
[v3] Mon, 22 Nov 2004 12:43:47 GMT (172kb)
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