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Condensed Matter > Materials Science

Title: Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions

Abstract: We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin-polarized at these voltages.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI: 10.1063/1.1781769
Cite as: arXiv:cond-mat/0404002 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0404002v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Gregory Fuchs [view email]
[v1] Wed, 31 Mar 2004 23:07:09 GMT (189kb)
[v2] Fri, 2 Apr 2004 20:06:27 GMT (194kb)

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