Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

Klein, L. J.; Slinker, K. A.; Truitt, J. L.; Goswami, S.; Lewis, K. L. M.; Coppersmith, S. N.; van der Weide, D. W.; Friesen, Mark; Blick, R. H.; Savage, D. E.; Lagally, M. G.; Tahan, Charles; Joynt, Robert; Eriksson, M. A.; Chu, J. O.; Ott, J. A.; Mooney, P. M.

doi:10.1063/1.1751612

Full-text links:

Download:

PDF only

(license)

Current browse context:

cond-mat

< prev | next >

new | recent | 0404

References & Citations

NASA ADS

Bookmark

(what is this?)

Condensed Matter > Materials Science

Title: Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

Authors: L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, Mark Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charles Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, P. M. Mooney

(Submitted on 16 Apr 2004 (v1), last revised 20 Apr 2004 (this version, v2))

Abstract: We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.

Comments:	Typos corrected; to appear in Appl. Phys. Lett
Subjects:	Materials Science (cond-mat.mtrl-sci)
Journal reference:	Appl. Phys. Lett. v84, p4047 (2004)
DOI:	10.1063/1.1751612
Cite as:	arXiv:cond-mat/0404399 [cond-mat.mtrl-sci]
	(or arXiv:cond-mat/0404399v2 [cond-mat.mtrl-sci] for this version)

Submission history

From: Mark Friesen [view email]
[v1] Fri, 16 Apr 2004 16:29:04 GMT (379kb)
[v2] Tue, 20 Apr 2004 18:40:54 GMT (379kb)

Which authors of this paper are endorsers? | Disable MathJax (What is MathJax?)

Link back to: arXiv, form interface, contact.