References & Citations
Condensed Matter > Materials Science
Title: Tunnel Magneto-resistance in GaMnAs: going beyond Jullière formula
(Submitted on 20 May 2004 (v1), last revised 13 Oct 2004 (this version, v2))
Abstract: The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The materials are described in the 6 band $\bf {k}\cdot \bf{p}$ model which includes spin orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of of spin polarization and barrier thickness. As a result of the stong spin orbit interactions, TMR also depends on the the angle between current flow direction and the electrode magnetization. These results compromise the validity of Julliere formula.
Submission history
From: Luis Brey [view email][v1] Thu, 20 May 2004 07:49:41 GMT (83kb)
[v2] Wed, 13 Oct 2004 12:57:14 GMT (83kb)
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