Photoluminescence measurements in Be-delta-doped back-gate induced quantum well

Yamaguchi, M.; Nomura, S.; Sato, D.; Akazaki, T.; Tamura, H.; Takayanagi, H.

doi:10.1016/j.susc.2005.01.058

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Condensed Matter > Mesoscale and Nanoscale Physics

Title: Photoluminescence measurements in Be-delta-doped back-gate induced quantum well

Authors: M. Yamaguchi, S. Nomura, D. Sato, T. Akazaki, H. Tamura, H. Takayanagi

(Submitted on 24 May 2004 (v1), last revised 25 May 2004 (this version, v2))

Abstract: The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 10^{9} cm^{-2} to 2.5 X 10^{11} cm^{-2} by changing the back gate voltage. There is a linear increase in the acceptor PL spectrum around 1.49 eV with an increase in the back gate voltage and the PL disappears from the exciton bound to neutral donors (D^{0}X) around 1.51 eV at 1.2 X 10^{10} cm^{-2}.

Comments:	3 pages
Subjects:	Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
DOI:	10.1016/j.susc.2005.01.058
Cite as:	arXiv:cond-mat/0405552 [cond-mat.mes-hall]
	(or arXiv:cond-mat/0405552v2 [cond-mat.mes-hall] for this version)

Submission history

From: Masumi Yamaguchi [view email]
[v1] Mon, 24 May 2004 16:46:01 GMT (389kb)
[v2] Tue, 25 May 2004 10:56:22 GMT (27kb)

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