Title: Diagnosis of transport properties in the Mn_xGe_{1-x} Ferromagnet

Abstract: The newly reported Mn$_x$Ge$_{1-x}$ ferromagnetic semiconductor, which is also compatible with the current microelectronics technology is analyzed theoretically using the Ionization energy based Fermi-Dirac statistics in order to understand the evolution of resistivity and magnetization with temperature and Mn doping. The resistivity model, derived here takes the spin-disorder scattering and magnetization function as additional variables below the Curie temperature, apart from the polaronic effect. Extraordinarily, the calculated charge carriers concentration, 10$^{19}$ cm$^{-3}$ is in the same order with the experimental values.