Title: Diagnosis of transport properties in the $Mn_x Ge_{1-x}$ Ferromagnet

Abstract: The newly reported Mn$_x$Ge$_{1-x}$ ferromagnetic semiconductor, which is also compatible with the current microelectronics technology is analyzed theoretically using the Ionization energy based Fermi-Dirac statistics in order to understand the evolution of resistivity and magnetization with temperature and Mn doping. The resistivity model, derived here takes the magnetization function as additional variable below the Curie temperature, apart from the polaronic effect. Extraordinarily, the calculated charge carriers concentration, 10$^{19}$ cm$^{-3}$ is in the same order with the experimental values, without invoking any hole compensation effect.