References & Citations
Condensed Matter > Materials Science
Title: Diagnosis of transport properties in Ferromagnets
(Submitted on 1 Jun 2004 (v1), revised 3 Oct 2004 (this version, v6), latest version 11 Mar 2005 (v8))
Abstract: The resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both spin independent and spin-assisted charge transport of ferromagnets, including the newly reported Mn$_x$Ge$_{1-x}$ ferromagnetic semiconductor. The computed $T_{crossover}$ below $T_C$ and carrier density in Ga$_{1-x}$Mn$_x$As system are 8-12 K and 10$^{19}$ cm$^{-3}$, remarkably identical with the experimental values of 10-12 K and 10$^{18}-10^{20}$ cm$^{-3}$ respectively. The calculated charge carriers density for Mn$_x$Ge$_{1-x}$ is 10$^{19}$ cm$^{-3}$, which is also in the same order with the experimental values, without invoking any hole compensation effect.
Submission history
From: Andrew Das Arulsamy [view email][v1] Tue, 1 Jun 2004 15:23:27 GMT (125kb)
[v2] Tue, 15 Jun 2004 14:17:00 GMT (125kb)
[v3] Sun, 20 Jun 2004 13:52:42 GMT (126kb)
[v4] Thu, 8 Jul 2004 11:17:44 GMT (126kb)
[v5] Tue, 17 Aug 2004 14:29:50 GMT (126kb)
[v6] Sun, 3 Oct 2004 07:58:59 GMT (520kb)
[v7] Sun, 14 Nov 2004 12:53:38 GMT (518kb)
[v8] Fri, 11 Mar 2005 00:01:52 GMT (521kb)
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