Title: Asymmetry of the electronic states in hole- and electron-doped cuprates: Exact diagonalization study of the t-t'-t''-J model

Abstract: We examine the doping dependence of the electronic states in the hole- and electron-doped cuprates by using the t-t'-t''-J model. Numerically exact diagonalization method is employed for a 20-site square lattice under twisted boundary conditions. In the presence of the second- and third-neighbor hoppings, t' and t'', antiferromagnetic (AF) spin correlation remains strong in electron doping in contrast to the case of hole doping. This leads to a remarkable electron-hole asymmetry in the dynamical spin structure factor and two-magnon Raman scattering. The single-particle spectral function and optical conductivity also show dramatic differences between hole and electron dopings. At 10% doping of holes (the carrier concentration x=0.1), a gap opens in the spectral function at around the k=(pi,0) region, leading to a Fermi arc that is consistent with experiments. The gap disappears at x=0.2. In electron doping, a gap opens at around k=(pi/2,pi/2) and persists up to x=0.2, being correlated with the strength of the AF correlation. We find that the magnitude of the gaps is sensitive to t' and t''. A pseudogap is also seen in the optical conductivity for electron doping, and its magnitude is the same as that in the spectral function. All of the asymmetries come from the coupling of carriers with the spin background whose feature is controlled by t' and t''. We compare these results with experimental as well as previous theoretical ones, and discuss implications of them.